Comparison of TSEP Performances Operating at Homogeneous and Inhomogeneous Temperature Distribution in Multichip IGBT Power Modules

Temperature sensitive electrical parameters (TSEPs) are used to determine the chip temperature of a single-chip insulated gate bipolar transistors (IGBT) power module by measuring one device parameter. Commonly, most TSEPs have linear relationship between and Like any sensor, preferred attributes include good accuracy, linearity, sensitivity. For multichip IGBTs (mIGBTs) modules, these can only be achieved when all chips same temperature. Equal temperatures among different semiconductor placing mIGBTs in environmental chambers produce homogeneous distribution (HTD). In real applications, however, cycled exposed inhomogeneous (ITD) where differences exist chips. Consequently, electric parameter cannot represent each which impacts TSEP sensitivity, accuracy. This article compares performance ten applied an mIGBT operating at HTD ITD conditions order suitable for applications.